Title :
Characterization of high performance CNT-based TSV for radar applications
Author :
Kim, Bruce ; Kannan, Sukeshwar ; Gupta, Anurag ; Noh, Seok-Ho ; Li, Li
Author_Institution :
Univ. of Alabama, Tuscaloosa, AL, USA
Abstract :
In this paper, we present modeling and characterization of CNT-based TSVs to be used in radar applications. We have developed an integrated model of CNT-based TSVs by incorporating quantum confinement effects of CNTs along with kinetic inductance phenomenon at high frequencies. Substrate parasitics have been appropriately modeled as monolithic microwave capacitor by resonant line technique using a two-polynomial equation. Different parametric variations in the model have been outlined as case studies. Furthermore, electrical performance and signal integrity analysis on different cases have been used to determine optimized configuration for TSV-based CNTs for radar applications.
Keywords :
capacitors; polynomials; radar; three-dimensional integrated circuits; high performance CNT-based TSV; kinetic inductance phenomenon; monolithic microwave capacitor; quantum confinement effects; radar applications; two-polynomial equation; Frequency measurement; Integrated circuit modeling; Materials; Mathematical model; Quantum capacitance; Radar applications; Through-silicon vias; CNT; Modeling; Radar application; Signal integrity; TSV;
Conference_Titel :
Electronics Packaging Technology Conference (EPTC), 2011 IEEE 13th
Conference_Location :
Singapore
Print_ISBN :
978-1-4577-1983-7
Electronic_ISBN :
978-1-4577-1981-3
DOI :
10.1109/EPTC.2011.6184462
