Title :
A broadband monolithic S-band class-E power amplifier
Author_Institution :
Raytheon Electron. Syst., El Segundo, CA, USA
Abstract :
This paper describes what is believed to be the first successful design and fabrication of a highly efficient broadband monolithic class-E power amplifier that operates at S-band and employs a 0.3 /spl mu/m /spl times/ 1000 /spl mu/m pHEMT device. The amplifier measured performance shows a peak Power Added Efficiency (PAE) of 90% and a peak output power of greater than 23 dBm at 3.25 GHz.
Keywords :
HEMT integrated circuits; MMIC power amplifiers; field effect MMIC; integrated circuit design; switching circuits; wideband amplifiers; 0.3 micron; 1000 micron; 3.25 GHz; 90 percent; CPW; MMIC amplifier chip; PHEMT device; S-band; broadband power amplifier; class-E power amplifier; design methodology; fabrication; monolithic power amplifier; Broadband amplifiers; Circuit simulation; High power amplifiers; Microwave devices; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Switches; Voltage;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7246-8
DOI :
10.1109/RFIC.2002.1011509
