Bulk-driven gain-enhanced fully-differential amplifier for VT + 2Vdsat operation

Author

Layton, Kent D. ; Comer, Donald T. ; Comer, David J.

Author_Institution

AMI Semconductor, American Fork, American Fork, UT

fYear

2008

fDate

18-21 May 2008

Firstpage

77

Lastpage

80

Abstract

A bulk-driven fully differential CMOS amplifier based on an active bootstrapped gain enhancement technique is introduced. The gain enhancement technique produces gains in excess of 100dB at supply voltages below V_T + 2V_dsat in a two stage amplifier. The design constraints for obtaining maximum speed with this architecture are discussed. Simulations of the fully differential amplifier designed in an AMIS 0.35mum CMOS process with a class-AB output stage are shown and compared to other low-voltage amplifier architectures.

Keywords

CMOS analogue integrated circuits; bootstrap circuits; differential amplifiers; integrated circuit design; AMIS CMOS process; active bootstrapped gain enhancement technique; bulk-driven fully differential CMOS amplifier; class-AB output stage; two stage amplifier; Ambient intelligence; Analog circuits; Differential amplifiers; Low voltage; Noise reduction; Operational amplifiers; Signal to noise ratio; Threshold voltage; Transconductance; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on

Conference_Location

Seattle, WA

Print_ISBN

978-1-4244-1683-7

Electronic_ISBN

978-1-4244-1684-4

Type

conf

DOI

10.1109/ISCAS.2008.4541358

Filename

4541358