Ultra low-power VCO based on InP-HEMT and heterojunction interband tunnel diode for wireless application

Author

Cidronali, A. ; Collodi, G. ; Camprini, M. ; Nair, V. ; Manes, G. ; Lewis, J. ; Goronkin, H.

Author_Institution

Dept. Electron. & Telecommun., Florence Univ., Firenze, Italy

Volume

1

fYear

2002

fDate

2-7 June 2002

Firstpage

43

Abstract

The monolithic integration of tunneling diodes (TDs) with other semiconductor devices such as HEMTs or HBTs, creates novel quantum functional nonlinear devices and circuits with unique properties: the Negative Differential Resistance (NDR) and the extremely low DC power consumption. In this paper we present an InP-HEMT/TD based voltage controlled oscillator operating in the 6 GHz band suitable for wireless applications. The circuit draws a current of 1.75 mA at 500 mV and generates an output power of -16 dBm. The maximum tuning range is 150 MHz and the single sideband-to-carrier ratio (SSCR) is of -105 dBc/Hz at 5 MHz.

Keywords

HEMT integrated circuits; MMIC oscillators; circuit tuning; field effect MMIC; low-power electronics; negative resistance circuits; tunnel diode oscillators; voltage-controlled oscillators; 1.75 mA; 500 mV; 6 GHz; InP; InP HEMT; LF stability condition; MMIC VCO; NDR; heterojunction interband tunnel diode; low DC power consumption; low frequency stability condition; monolithic integration; negative differential resistance; quantum functional nonlinear devices; ultra low-power VCO; voltage controlled oscillator; wireless application; Energy consumption; HEMTs; Heterojunctions; MODFETs; Monolithic integrated circuits; Power generation; Semiconductor devices; Semiconductor diodes; Tunneling; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011554

Filename

1011554