DocumentCode :
1828825
Title :
50 GB-capacity dual-layer Blu-ray Disc with GeSbTe based phase-change films
Author :
Nishiuchi, Kenichi ; Nishihara, Takashi ; Kitaura, Hideki ; Kojima, Rie ; Yamada, Nobom
fYear :
2003
fDate :
17-19 June 2003
Firstpage :
74
Lastpage :
75
Abstract :
GeSbTe-based thin films showed superior properties for a recording layer of Blu-ray Disc, especially for a front-side recording layer of L1. The film can be thinned to 6 nm with maintaining a rapid phase-transition rate and a large transmittance of >50% was realized in the L1. It is remarkable that transmittances are balanced between in the amorphous and crystalline areas of L1, and it works to remove the optical interference when recording-playing on the rear-side recording layer of L0 through the L1.
Keywords :
light interference; optical disc storage; rewriting systems; semiconductor thin films; 50 GByte; GeSbTe; dual-layer Blu-ray Disc; front-side recording layer; optical interference; phase-change films; phase-transition rate; rear-side recording layer; recording layer; transmittance; Amorphous materials; Crystallization; Disk recording; Interference; Manufacturing; Optical films; Optical recording; Power lasers; Resins; Springs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Consumer Electronics, 2003. ICCE. 2003 IEEE International Conference on
Print_ISBN :
0-7803-7721-4
Type :
conf
DOI :
10.1109/ICCE.2003.1218813
Filename :
1218813
Link To Document :
بازگشت