Title :
40-Gb/s optical receiver IC chipset - including a transimpedance amplifier, a differential amplifier, and a decision circuit - using GaAs-based HBT technology
Author :
Amamiya, Y. ; Suzuki, Y. ; Kawanaka, M. ; Hosoya, K. ; Yamazaki, Z. ; Mamada, M. ; Takahashi, H. ; Wada, S. ; Kato, T. ; Ikenaga, Y. ; Tanaka, S. ; Takeuchi, T. ; Hida, H.
Author_Institution :
Photonic & Wireless Devices Res. Labs., NEC Corp., Ibaraki, Japan
Abstract :
GaAs-based HBTs with an InGaP emitter were used to develop key components of a 40-Gb/s optical receiver: a transimpedance amplifier, a differential main amplifier, and a decision circuit. The frequency response of the transimpedance amplifier was flattened by inserting an RC series circuit at the input stage. As a result, the transimpedance amplifier module produced a well-opened 43-Gb/s eye diagram with 400 mVp-p dynamic range. The differential main amplifier and the decision circuit produced 43-Gb/s eye diagrams with a large dynamic range of 700 mVp-p, which is the first 40-Gb/s demonstration using GaAs-based HBTs. These three ICs are thus applicable to a 40-Gb/s optical receiver.
Keywords :
III-V semiconductors; bipolar integrated circuits; decision circuits; differential amplifiers; digital communication; gallium arsenide; heterojunction bipolar transistors; optical receivers; 40 Gbit/s; 43 Gbit/s; GaAs-based HBT technology; InGaP emitter; RC series circuit; amplifier frequency response; decision circuit; differential main amplifier; optical receiver IC chipset; transimpedance amplifier; Bandwidth; Differential amplifiers; Dynamic range; Frequency response; Heterojunction bipolar transistors; High speed optical techniques; Optical amplifiers; Optical receivers; Photonic integrated circuits; Semiconductor optical amplifiers;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011565
