Title :
TSV diagnostics by X-ray microscopy
Author :
Sueoka, Kuniaki ; Yamada, Fumiaki ; Horibe, Akihiro ; Kikuchi, Hidekazu ; Minami, Katsunori ; Orii, Yasumitsu
Author_Institution :
Tohken Co., Ltd., Chofu, Japan
Abstract :
TSV (Through Silicon Via) is one of the key elements for building 3D integrated silicon devices with high bandwidth interconnections. In this paper, we propose a diagnostic method for TSV defects by using X-ray projection microscopy. By optimizing the image contrast of the X-ray projection micrographs in reference to its X-ray intensity histogram, we could obtain the small defect features in TSVs fast and non-destructively. Comparison between this X-ray observation and the destructive cross sectional observation agreed very well. We also extended the implementation of this X-ray microscope diagnostic method to 8-in. full wafer observation. We investigated the wafers with copper-filled TSVs with 80 μm and 20 μm diameters, and confirmed the feasibility of this method for an in-line process monitoring.
Keywords :
X-ray microscopy; elemental semiconductors; integrated circuit interconnections; integrated circuit packaging; silicon; three-dimensional integrated circuits; 3D integrated devices; Si; TSV diagnostics; X-ray intensity histogram; X-ray microscope diagnostic method; X-ray microscopy; X-ray observation; X-ray projection micrographs; X-ray projection microscopy; destructive cross sectional observation; full wafer observation; high bandwidth interconnections; image contrast; in-line process monitoring; size 20 mum; size 80 mum; through silicon via; Copper; Correlation; Histograms; Microscopy; Silicon; Through-silicon vias; X-ray imaging;
Conference_Titel :
Electronics Packaging Technology Conference (EPTC), 2011 IEEE 13th
Conference_Location :
Singapore
Print_ISBN :
978-1-4577-1983-7
Electronic_ISBN :
978-1-4577-1981-3
DOI :
10.1109/EPTC.2011.6184508
