Transistor-level programmable MOS analog IC with body biasing

This paper aims at developing a transistor-level programmable technology which is composed of two key mechanisms; One is that a MOS transistor is divided into sub-transistors connected in parallel, so that the transistor behaves various characteristics by switching the parallel connection. The other mechanism changes V_th and g_m of the transistor by adjusting the bulk potential based on body effect. These mechanisms are combined and embedded into an opamp circuit. In the post-layout simulation, the results showed our mechanisms could tune the circuit performance such as the gain continuously as well as over a wide range.