DocumentCode :
1829333
Title :
Thermal analysis of high brightness flip-chip LED packages
Author :
Qin, Pei ; Li, Qingqian ; Chan, Y.C.
Author_Institution :
Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, China
fYear :
2011
fDate :
7-9 Dec. 2011
Firstpage :
722
Lastpage :
725
Abstract :
Thermal reliability is one of the key issues for high brightness light emitting diode (LED) devices, due to its high power consumption, that suffers challenges on its heat dissipation while operating with 80% -90% of its energy transformed into heat. In this paper, a new module with the combination of nanosilver thermal interface materials (TIM) and a thin upper diamond layer on Al2O3 low temperature co-fired ceramics (LTCC) substrate for power LED packages was proposed. A flip chip structure bonding was used to effectively reduce the thermal path. Thermal characteristics of this LED module have been analyzed by using a three-dimensional thermal conduction model. The analysis results reveal that the LED module obtains superior thermal performance compared to other structures with Ag epoxy TIM, no diamond layer, and wire bonding structure. The LED module has a junction temperature of 87.3°C, which meets requirement of junction temperature under 120 °C. The thermal resistance is also analyzed and calculated as 4.8 C/W, a quite competitive value in high brightness LEDs.
Keywords :
ceramic packaging; flip-chip devices; integrated circuit reliability; light emitting diodes; thermal analysis; thermal resistance; Al2O3; LED module; epoxy TIM; flip chip structure bonding; high brightness flip-chip LED packages; high brightness light emitting diode devices; low temperature cofired ceramics substrate; nanosilver TIM; nanosilver thermal interface materials; power LED packages; power consumption; temperature 87.3 degC; thermal analysis; thermal reliability; thermal resistance; three-dimensional thermal conduction model; Electronic packaging thermal management; Heating; Junctions; Light emitting diodes; Substrates; Temperature; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Packaging Technology Conference (EPTC), 2011 IEEE 13th
Conference_Location :
Singapore
Print_ISBN :
978-1-4577-1983-7
Electronic_ISBN :
978-1-4577-1981-3
Type :
conf
DOI :
10.1109/EPTC.2011.6184513
Filename :
6184513
Link To Document :
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