Title :
Graphene nanoribbon field-effect transistors
Author :
Thornhill, Stephen ; Wu, Nathanael ; Wang, Z.F. ; Shi, Q.W. ; Chen, Jie
Author_Institution :
Electr. & Comput. Eng. Dept, Univ. of Alberta, Edmonton, AB
Abstract :
We demonstrated that an electronic field-effect transistor (FET) can be made from patterned monolayer or bilayer graphene nanoribbons. The FET performance can be achieved regardless of structural defects (either edge defects or topological defects). The I-V characteristics of resulting FETs are similar to those made from single-walled carbon nanotubes. This one-dimensional functional device is very useful for future nanoscale electronics.
Keywords :
carbon nanotubes; field effect transistors; nanoelectronics; I-V characteristics; bilayer graphene nanoribbons; electronic field-effect transistor; graphene nanoribbon field-effect transistors; nanoscale electronics; patterned monolayer; single-walled carbon nanotubes; topological defects; CMOS technology; Carbon nanotubes; Circuits; Electrons; FETs; Lithography; Nanoscale devices; Nearest neighbor searches; Semiconductivity; Silicon;
Conference_Titel :
Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-1683-7
Electronic_ISBN :
978-1-4244-1684-4
DOI :
10.1109/ISCAS.2008.4541381
