Title :
Review of SiGe process technology and its impact on RFIC design
Author :
Das, A. ; Huang, M. ; Mondal, J. ; Kaczman, D. ; Shurboff, C. ; Cosentino, S.
Author_Institution :
Motorola Inc., Libertyville, IL, USA
Abstract :
In this paper, we review recently published SiGe BiCMOS technologies for RFIC design. Performance and integration trends in SiGe HBT´s are discussed. The performance of passive devices, such as inductors, plays a key role in RF design. We review approaches to realizing high-Q inductor on a Si substrate. Finally, the interaction of HBT performance with design is illustrated through LNA design.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC; UHF integrated circuits; heterojunction bipolar transistors; inductors; integrated circuit design; integrated circuit technology; reviews; semiconductor materials; HBT performance; LNA design; RFIC design; Si; Si substrate; SiGe; SiGe BiCMOS technologies; SiGe HBTs; SiGe process technology; high-Q inductor; passive devices; BiCMOS integrated circuits; CMOS technology; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; Radio frequency; Radiofrequency integrated circuits; Silicon germanium; Substrates;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011586
