High performance circuits in 0.18 /spl mu/m SiGe BiCMOS process for wireless applications

Author

Peihua Ye ; Agarwal, B. ; Reddy, M. ; Li, L. ; Cheng, J. ; Mudge, P.C. ; McCarthy, E. ; Lloyd, S.L.

Author_Institution

Conexant Syst. Inc., Newport Beach, CA, USA

Volume

1

fYear

2002

fDate

2-7 June 2002

Firstpage

175

Abstract

Silicon germanium bipolar CMOS (SiGe BiCMOS) process technology is gaining increasing popularity for RF circuits in wireless applications due to high performance, low cost, high yield and higher levels of integration with mixed signal and digital CMOS circuits. Four test circuits were designed and fabricated in Conexant´s 0.18 /spl mu/m SiGe BiCMOS process to evaluate the performance benefits provided by this state of the art process technology. The RF performance achieved in this process clearly makes this a process of choice for future RFIC products.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC; cellular radio; integrated circuit design; integrated circuit testing; integrated circuit yield; mixed analogue-digital integrated circuits; semiconductor materials; telephone sets; 0.18 micron; RF circuits; RF performance; RFIC; SiGe; SiGe BiCMOS process technology; cellular phones; circuit performance; digital CMOS circuit integration; handsets; integration levels; mixed signal CMOS circuit integration; process cost; process yield; silicon germanium Bipolar CMOS process technology; test circuits; wireless applications; BiCMOS integrated circuits; CMOS digital integrated circuits; CMOS process; CMOS technology; Circuit testing; Costs; Germanium silicon alloys; RF signals; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011587

Filename

1011587