Low-frequency noise figures-of-merit in RF SiGe HBT technology

Author

Jin Tang ; Guofu Niu ; Zhenrong Jin ; Cressler, J.D. ; Shiming Zhang ; Joseph, A.J. ; Harame, D.L.

Author_Institution

Dept. of Electron. & Comput. Eng., Auburn Univ., AL, USA

Volume

1

fYear

2002

fDate

2-7 June 2002

Firstpage

179

Abstract

We present the first systematic experimental and modeling results of corner frequency (f/sub C/) and the corner frequency to cut-off frequency ratio (f/sub C//f/sub T/) for SiGe HBTs in a commercial SiGe RF technology. The f/sub C//f/sub T/ ratio is examined as a function of biasing current for SiGe HBTs featuring multiple collector doping profiles (breakdown voltages) and multiple SiGe profiles.

Keywords

1/f noise; Ge-Si alloys; doping profiles; electric current; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device breakdown; semiconductor device measurement; semiconductor device models; semiconductor device noise; semiconductor materials; RF SiGe HBT technology; SiGe; SiGe HBTs; SiGe RF technology; biasing current; breakdown voltages; corner frequency; corner frequency to cut-off frequency ratio; low-frequency noise figures-of-merit; modeling; multiple SiGe profiles; multiple collector doping profiles; Cutoff frequency; Doping profiles; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Noise figure; Noise measurement; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011588

Filename

1011588