Title :
COM2 enhanced graded base SiGe technology for high speed applications
Author :
Ivanov, T. ; Carroll, Mariana ; Moinian, S. ; Mastrapasqua, M. ; Frei, A. ; Chen, Aaron ; King, Candice ; Hamad, Amr A. ; Martin, Eric ; Shive, S. ; Esry, T. ; Lee, Chi-Kwan ; Johnson, R. ; Sorsch, T. ; Carroll, Mariana ; Banoo, K. ; Smith, Paul ; Cochran
Author_Institution :
Agere Syst., Orlando, FL, USA
Abstract :
The COM2 enhanced graded base SiGe modular BiCMOS technology has been developed. It is based on the COM2 digital CMOS process. The technology achieves peak f/sub t/=100 GHz, peak f/sub max/=101 GHz, peak /spl beta/=186 and BV/sub cex/=2.05 V. An f/sub t/-BV/sub cex/ product of 205 and good across wafer uniformity are demonstrated.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC; high-speed integrated circuits; integrated circuit manufacture; integrated circuit measurement; semiconductor materials; 100 GHz; 101 GHz; 2.05 V; COM2 digital CMOS process; COM2 enhanced graded base SiGe modular BiCMOS technology; COM2 enhanced graded base SiGe technology; SiGe; across wafer uniformity; high speed applications; maximum operating frequency; peak cut-off frequency; BiCMOS integrated circuits; CMOS process; CMOS technology; Capacitors; Germanium silicon alloys; Random access memory; Resistors; Silicon germanium; Transceivers; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011589
