COM2 enhanced graded base SiGe technology for high speed applications

Author

Ivanov, T. ; Carroll, Mariana ; Moinian, S. ; Mastrapasqua, M. ; Frei, A. ; Chen, Aaron ; King, Candice ; Hamad, Amr A. ; Martin, Eric ; Shive, S. ; Esry, T. ; Lee, Chi-Kwan ; Johnson, R. ; Sorsch, T. ; Carroll, Mariana ; Banoo, K. ; Smith, Paul ; Cochran

Author_Institution

Agere Syst., Orlando, FL, USA

Volume

1

fYear

2002

fDate

2-7 June 2002

Firstpage

183

Abstract

The COM2 enhanced graded base SiGe modular BiCMOS technology has been developed. It is based on the COM2 digital CMOS process. The technology achieves peak f/sub t/=100 GHz, peak f/sub max/=101 GHz, peak /spl beta/=186 and BV/sub cex/=2.05 V. An f/sub t/-BV/sub cex/ product of 205 and good across wafer uniformity are demonstrated.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC; high-speed integrated circuits; integrated circuit manufacture; integrated circuit measurement; semiconductor materials; 100 GHz; 101 GHz; 2.05 V; COM2 digital CMOS process; COM2 enhanced graded base SiGe modular BiCMOS technology; COM2 enhanced graded base SiGe technology; SiGe; across wafer uniformity; high speed applications; maximum operating frequency; peak cut-off frequency; BiCMOS integrated circuits; CMOS process; CMOS technology; Capacitors; Germanium silicon alloys; Random access memory; Resistors; Silicon germanium; Transceivers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011589

Filename

1011589