Title :
High quality factor and high self-resonant frequency monolithic inductor for millimeter-wave Si-based IC´s
Author :
Dubuc, D. ; Tournier, E. ; Telliez, I. ; Parra, T. ; Boulanger, C. ; Graffeuil, J.
Author_Institution :
Lab. d´Autom. et d´Anal. des Syst., CNRS, Toulouse, France
Abstract :
Substrate losses of inductors realized with a SiGe BICMOS technology (psubstrate=15 /spl Omega/cm) are investigated. The benefit of introducing a thin conductive (p=0.5 /spl Omega/cm) epitaxial layer below the oxide beneath metal strip in order to obtain a high quality factor and a high self-resonant frequency (SRF) is demonstrated. Finally, measurements of the newly developed inductor show a high quality factor of 22 at 30 GHz with the conductive epitaxial layer connected to ground. Moreover, an impressive measured SRF of 64 GHz is achieved for an inductor value of 0.75 nH.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MIMIC; Q-factor; inductors; semiconductor materials; 30 GHz; 64 GHz; SiGe; SiGe BiCMOS technology; conductive epitaxial layer; millimeter-wave IC; monolithic inductor; quality factor; self-resonant frequency; substrate loss; BiCMOS integrated circuits; Conductivity measurement; Epitaxial layers; Frequency; Germanium silicon alloys; Inductors; Q factor; Silicon germanium; Strips; Substrates;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011591
