Title :
Two-port type ferromagnetic RF integrated inductor
Author :
Yarnaguchi, M. ; Kuribara, T. ; Arai, K.-I.
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
Abstract :
Two-port type rf integrated inductor with on-top magnetic layer was fabricated. Equivalent circuit analysis of the ferromagnetic RF integrated inductor was performed for the first time. Structure of the possible equivalent circuit is proposed. Parasitic capacitance of the ferromagnetic film is negligibly small if the film is applied slits. Ferromagnetic Co/sub 85/Nb/sub 12/Zr/sub 3/ film with slits effectively enhanced the inductance up to 5 GHz.
Keywords :
cobalt alloys; equivalent circuits; ferromagnetic materials; inductors; magnetic thin film devices; niobium alloys; zirconium alloys; 5 GHz; Co/sub 85/Nb/sub 12/Zr/sub 3/; Co/sub 85/Nb/sub 12/Zr/sub 3/ film; equivalent circuit; magnetic layer; parasitic capacitance; two-port ferromagnetic RF integrated inductor; Circuit analysis; Equivalent circuits; Inductors; Magnetic analysis; Magnetic films; Niobium; Parasitic capacitance; Performance analysis; Radio frequency; Zirconium;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011592
