Title :
Charge storage characteristic for double layer of Si3N 4/SiO2 and single layer of Si3N4
Author :
Pan, Yonggang ; Xia, Zhongfu ; Zhang, Xiaoqin ; Zhang, Yewen
Author_Institution :
Pohl Inst. of Solid State Phys., Tongji Univ., Shanghai, China
Abstract :
The charge storage properties of amorphous silicon nitride (Si3N4) film deposited by LPCVD on silicon substrate and double layer of Si3N4/SiO2 on silicon substrate have been investigated. Because the double layer of Si3N4 /SiO2 has more outstanding charge storage stability than single layer silicon dioxide, people are very interested in the charge storage mechanism of Si3N4/SiO2. In this paper, a revised formula for calculating the mean charge depth of the double layer system for inorganic dielectric films was introduced based on Guenther and Sessler´s method (1991). Space charge storage characteristics and the shift of the mean charge depth under different conditions were investigated by means of corona charging, TSD (thermal stimulated discharge), capacitance-voltage (C-V) analysis method and chemical surface modification, etc
Keywords :
CVD coatings; capacitance; dielectric thin films; silicon compounds; space charge; thermally stimulated currents; C-V analysis; Si; Si substrate; Si3N4; Si3N4-SiO2; Si3N4/SiO2; TSD; amorphous LPCVD film; capacitance-voltage analysis; charge storage characteristic; charge storage mechanism; chemical surface modification; corona charging; double layer; electrets; inorganic dielectric films; mean charge depth; revised formula; single layer; thermal stimulated discharge; Amorphous silicon; Capacitance-voltage characteristics; Chemical analysis; Corona; Dielectric films; Semiconductor films; Silicon compounds; Space charge; Stability; Substrates;
Conference_Titel :
Electrets, 1999. ISE 10. Proceedings. 10th International Symposium on
Conference_Location :
Athens
Print_ISBN :
0-7803-5025-1
DOI :
10.1109/ISE.1999.832069
