Charge storage characteristic for double layer of Si3N 4/SiO2 and single layer of Si3N4

The charge storage properties of amorphous silicon nitride (Si₃N₄) film deposited by LPCVD on silicon substrate and double layer of Si₃N₄/SiO₂ on silicon substrate have been investigated. Because the double layer of Si₃N₄ /SiO₂ has more outstanding charge storage stability than single layer silicon dioxide, people are very interested in the charge storage mechanism of Si₃N₄/SiO₂. In this paper, a revised formula for calculating the mean charge depth of the double layer system for inorganic dielectric films was introduced based on Guenther and Sessler´s method (1991). Space charge storage characteristics and the shift of the mean charge depth under different conditions were investigated by means of corona charging, TSD (thermal stimulated discharge), capacitance-voltage (C-V) analysis method and chemical surface modification, etc