DocumentCode
1829793
Title
Performance analysis of monolithic RF transformers by experimental characterization
Author
Kamgaing, T. ; Myers, T. ; Feng Ling ; Petras, M. ; Miller, M. ; Ramahi, O.
Author_Institution
Motorola Inc., Tempe, AZ, USA
Volume
1
fYear
2002
fDate
2-7 June 2002
Firstpage
205
Abstract
Electrical performances of 4-port n:n dual-spiral transformers fabricated in a thick plated copper on silicon process are analyzed. Multiport data analysis techniques and compact modeling are used to study the relationships between the physical and the electrical attributes of the devices. Analytical models, based on measurements from 50 MHz to 20 GHz, are used to explore achievable device performance under different design constraints.
Keywords
high-frequency transformers; 50 MHz to 20 GHz; Cu; Si; analytical model; copper plating; electrical characteristics; four-port dual-spiral transformer; monolithic RF transformer; multiport data analysis; silicon substrate; Copper; Inductance; Mutual coupling; Performance analysis; Radio frequency; Radiofrequency integrated circuits; Scattering parameters; Silicon; Spirals; Transformers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location
Seattle, WA, USA
ISSN
0149-645X
Print_ISBN
0-7803-7239-5
Type
conf
DOI
10.1109/MWSYM.2002.1011594
Filename
1011594
Link To Document