DocumentCode
1829861
Title
Evaluation of ultra thick photo resist for high aspect ratio bumping applications
Author
Fernandez, Daniel Moses ; Rao, Vempati Srinivsa ; David, Soon Wee HO ; Justin, Wai Hong See Toh ; Siow, Li Yan
Author_Institution
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
fYear
2011
fDate
7-9 Dec. 2011
Firstpage
777
Lastpage
780
Abstract
This paper presents the evaluation results of two positive, thick resist molds for the electroplating of Copper pillar interconnects. Two different resist molds of 100 μm and 58 μm thickness have been fabricated with aspect ratios of 2.5 and 1.3 respectively in a single coat process. Lithography parameters have been optimized using a UV aligner to produce smooth and near vertical sidewall profiles for both resist molds. Through mold electroplating of Copper has also been demonstrated with good uniformity within ± 3% and ±2% respectively. The resist molds were also found to be stripped easily in standard solvent strippers making them suitable for fabrication of high aspect ratio interconnects.
Keywords
copper; electroplating; flip-chip devices; integrated circuit interconnections; interconnections; lithography; micromechanical devices; photoresists; Cu; UV aligner; copper pillar interconnect; high aspect ratio bumping applications; high aspect ratio interconnect; lithography parameters; mold electroplating; near vertical sidewall profile; resist mold; size 100 mum; size 50 mum; ultra thick photoresist evaluation; Coatings; Copper; Fabrication; Films; Lithography; Resistance; Resists;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Packaging Technology Conference (EPTC), 2011 IEEE 13th
Conference_Location
Singapore
Print_ISBN
978-1-4577-1983-7
Electronic_ISBN
978-1-4577-1981-3
Type
conf
DOI
10.1109/EPTC.2011.6184532
Filename
6184532
Link To Document