• DocumentCode
    1829861
  • Title

    Evaluation of ultra thick photo resist for high aspect ratio bumping applications

  • Author

    Fernandez, Daniel Moses ; Rao, Vempati Srinivsa ; David, Soon Wee HO ; Justin, Wai Hong See Toh ; Siow, Li Yan

  • Author_Institution
    Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
  • fYear
    2011
  • fDate
    7-9 Dec. 2011
  • Firstpage
    777
  • Lastpage
    780
  • Abstract
    This paper presents the evaluation results of two positive, thick resist molds for the electroplating of Copper pillar interconnects. Two different resist molds of 100 μm and 58 μm thickness have been fabricated with aspect ratios of 2.5 and 1.3 respectively in a single coat process. Lithography parameters have been optimized using a UV aligner to produce smooth and near vertical sidewall profiles for both resist molds. Through mold electroplating of Copper has also been demonstrated with good uniformity within ± 3% and ±2% respectively. The resist molds were also found to be stripped easily in standard solvent strippers making them suitable for fabrication of high aspect ratio interconnects.
  • Keywords
    copper; electroplating; flip-chip devices; integrated circuit interconnections; interconnections; lithography; micromechanical devices; photoresists; Cu; UV aligner; copper pillar interconnect; high aspect ratio bumping applications; high aspect ratio interconnect; lithography parameters; mold electroplating; near vertical sidewall profile; resist mold; size 100 mum; size 50 mum; ultra thick photoresist evaluation; Coatings; Copper; Fabrication; Films; Lithography; Resistance; Resists;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Packaging Technology Conference (EPTC), 2011 IEEE 13th
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4577-1983-7
  • Electronic_ISBN
    978-1-4577-1981-3
  • Type

    conf

  • DOI
    10.1109/EPTC.2011.6184532
  • Filename
    6184532