• DocumentCode
    1829909
  • Title

    Leakage-based differential power analysis (LDPA) on sub-90nm CMOS cryptosystems

  • Author

    Lin, Lang ; Burleson, Wayne

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Massachusetts, Amherst, MA
  • fYear
    2008
  • fDate
    18-21 May 2008
  • Firstpage
    252
  • Lastpage
    255
  • Abstract
    Since the vulnerability of cryptosystems to differential power analysis (DPA) was reported in 1999, various power analysis attacks and corresponding countermeasures have been studied. With the scaling down of supply voltage and CMOS technology below 90 nm, leakage power plays an increasing role in the overall power dissipation. Future cryptosystems need to address this trend, though it has not been of concern yet in low- cost cryptosystems such as smartcards and RFED tags which currently use older technologies and low performance transistors. In this paper, we explore the impact of leakage power on conventional DPA and the feasibility of a novel leakage-based DPA (LDPA). We first use SPICE simulations to explore the leakage dependence on input patterns of logic gates implemented in 90 nm, 65 nm, and 45 nm CMOS technologies. Then we simulate a successful LDPA on a subset of a DES cryptosystem with only 120 rounds, in contrast to the 200 rounds reported for a conventional DPA in 180 nm technology. Furthermore, we demonstrate how even a DES implementation using a DPA-resistant logic style can be broken with LDPA in 2000 rounds, compared with the conventional DPA using more than 5000 rounds.
  • Keywords
    CMOS integrated circuits; SPICE; logic gates; CMOS cryptosystems; SPICE simulations; differential power analysis; leakage power; logic gates; size 45 nm; size 65 nm; size 90 nm; CMOS logic circuits; CMOS technology; Cryptography; Log-periodic dipole antennas; Power dissipation; RFID tags; SPICE; Semiconductor device modeling; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
  • Conference_Location
    Seattle, WA
  • Print_ISBN
    978-1-4244-1683-7
  • Electronic_ISBN
    978-1-4244-1684-4
  • Type

    conf

  • DOI
    10.1109/ISCAS.2008.4541402
  • Filename
    4541402