High-isolation BST-MEMS switches

Author

Yu Liu ; Taylor, T.R. ; Speck, J.S. ; York, R.A.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

1

fYear

2002

fDate

2-7 June 2002

Firstpage

227

Abstract

In this paper, emerging (Ba,Sr)TiO/sub 3/ thin film technology was investigated for enhancing RF-MEMS capacitive switches. Materials properties of high-permittivity BST thin films and fabrication issues are discussed. Prototype BST-MEMS switches for K-/Ka-band applications were fabricated and measured. This measured data is compared with measurements from conventional SiN-based MEMS switches, showing improved isolation at lower frequencies due to the higher down-state capacitance density.

Keywords

barium compounds; ferroelectric thin films; micromechanical devices; microwave switches; permittivity; strontium compounds; (Ba,Sr)TiO/sub 3/ thin film technology; BST thin films; BaSrTiO/sub 3/; K-band applications; Ka-band applications; RF-MEMS capacitive switches; down-state capacitance density; high-isolation BST MEMS switches; high-permittivity thin films; Binary search trees; Capacitance measurement; Density measurement; Fabrication; Frequency measurement; Isolation technology; Material properties; Radiofrequency microelectromechanical systems; Switches; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011599

Filename

1011599