DocumentCode
1830055
Title
Influence of boron ion implantation on the mechanics and electret properties of Si3N4 single layer film
Author
Zhang, Xiaoqing ; Xia, Zhongfu ; Pan, Yonggang ; Zhang, Yewen
Author_Institution
Pohl Inst. of Solid State Phys., Tongji Univ., Shanghai, China
fYear
1999
fDate
1999
Firstpage
431
Lastpage
434
Abstract
Amorphous silicon nitride (Si3N4) film has outstanding electret properties and it is compatible with micromachining technology. Therefore, it is expected to be used as an electret vibrating membrane in miniature microphones. One of the most important parameters of characterizing electret-vibrating membranes is flexibility. So the reduction of internal stress due to boron ion implantation for the LPCVD Si3N4 film on silicon substrate is discussed first. The charge storage ability for the Si3N4 films B+ implanted by various doses and energies are investigated by means of negative corona charging, the isothermal surface potential decay measurements and open-circuit thermally stimulated discharge (TSD) current spectrum analysis
Keywords
CVD coatings; amorphous state; boron; electrets; insulating thin films; internal stresses; ion implantation; silicon compounds; surface potential; thermally stimulated currents; B3N4:B; LPCVD Si3N4 film; Si; Si3N4 single layer film; amorphous silicon nitride; boron ion implantation; charge storage ability; electret properties; electret vibrating membrane; internal stress; isothermal surface potential decay; mechanics; micromachining technology; miniature microphone; negative corona charging; open-circuit thermally stimulated discharge current; silicon substrate; Amorphous silicon; Biomembranes; Boron; Electrets; Internal stresses; Ion implantation; Micromachining; Microphones; Semiconductor films; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrets, 1999. ISE 10. Proceedings. 10th International Symposium on
Conference_Location
Athens
Print_ISBN
0-7803-5025-1
Type
conf
DOI
10.1109/ISE.1999.832079
Filename
832079
Link To Document