• DocumentCode
    1830291
  • Title

    RF power devices for wireless communications

  • Author

    Weitzel, C.E.

  • Author_Institution
    Semicond. Products Sector, Motorola Inc., Tempe, AZ, USA
  • Volume
    1
  • fYear
    2002
  • fDate
    2-7 June 2002
  • Firstpage
    285
  • Abstract
    A wide variety of semiconductor devices are used in wireless power amplifiers. This paper will review the advantages and disadvantages of these devices for handheld and infrastructure applications.
  • Keywords
    power amplifiers; power semiconductor devices; radio equipment; radiofrequency amplifiers; RF power device; handheld applications; infrastructure applications; semiconductor device; wireless communication; wireless power amplifier; Distributed control; FETs; GSM; Gallium arsenide; Heterojunction bipolar transistors; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Wireless communication;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2002 IEEE MTT-S International
  • Conference_Location
    Seattle, WA, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-7239-5
  • Type

    conf

  • DOI
    10.1109/MWSYM.2002.1011613
  • Filename
    1011613