An exact measurement and repair circuit of TSV connections for 128GB/s high-bandwidth memory(HBM) stacked DRAM

Author

Dong Uk Lee ; Kyung Whan Kim ; Kwan Weon Kim ; Kang Seol Lee ; Sang Jin Byeon ; Jin Hee Cho ; Han Ho Jin ; Sang Kyun Nam ; Jaejin Lee ; Jun Hyun Chun ; Sungjoo Hong

Author_Institution

SK Hynix, Icheon, South Korea

fYear

2014

fDate

10-13 June 2014

Firstpage

1

Lastpage

2

Abstract

For the heterogeneous-structured high bandwidth memory (HBM) DRAM, it is important to guarantee the reliability of TSV connections. An exact TSV current scan and repair method is proposed, that uses similar to the correlated double sampling method. The register-based pre-repair method improves testability. The measurement results for thousands of TSV shows impedance distribution under 0.1 ohm. Methods are integrated in 8Gb HBM stacked DRAM using 29nm process.

Keywords

DRAM chips; integrated circuit reliability; integrated circuit testing; sampling methods; three-dimensional integrated circuits; HBM stacked DRAM; TSV connections; bit rate 128 Gbit/s; correlated double sampling method; exact current scan; exact measurement; heterogeneous-structured high bandwidth memory; impedance distribution; register-based pre-repair method; repair circuit; size 29 nm; testability improvement; Current measurement; Impedance; Impedance measurement; Maintenance engineering; Random access memory; Through-silicon vias; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits Digest of Technical Papers, 2014 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4799-3327-3

Type

conf

DOI

10.1109/VLSIC.2014.6858368

Filename

6858368