Title :
An exact measurement and repair circuit of TSV connections for 128GB/s high-bandwidth memory(HBM) stacked DRAM
Author :
Dong Uk Lee ; Kyung Whan Kim ; Kwan Weon Kim ; Kang Seol Lee ; Sang Jin Byeon ; Jin Hee Cho ; Han Ho Jin ; Sang Kyun Nam ; Jaejin Lee ; Jun Hyun Chun ; Sungjoo Hong
Author_Institution :
SK Hynix, Icheon, South Korea
Abstract :
For the heterogeneous-structured high bandwidth memory (HBM) DRAM, it is important to guarantee the reliability of TSV connections. An exact TSV current scan and repair method is proposed, that uses similar to the correlated double sampling method. The register-based pre-repair method improves testability. The measurement results for thousands of TSV shows impedance distribution under 0.1 ohm. Methods are integrated in 8Gb HBM stacked DRAM using 29nm process.
Keywords :
DRAM chips; integrated circuit reliability; integrated circuit testing; sampling methods; three-dimensional integrated circuits; HBM stacked DRAM; TSV connections; bit rate 128 Gbit/s; correlated double sampling method; exact current scan; exact measurement; heterogeneous-structured high bandwidth memory; impedance distribution; register-based pre-repair method; repair circuit; size 29 nm; testability improvement; Current measurement; Impedance; Impedance measurement; Maintenance engineering; Random access memory; Through-silicon vias; Transistors;
Conference_Titel :
VLSI Circuits Digest of Technical Papers, 2014 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4799-3327-3
DOI :
10.1109/VLSIC.2014.6858368
