A very-low-loss 2-bit X-band RF MEMS phase shifter

Author

Tan, G.L. ; Mihailovich, R.E. ; Hacker, J.B. ; DeNatale, J.F. ; Rebeiz, G.M.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

1

fYear

2002

fDate

2-7 June 2002

Firstpage

333

Abstract

A novel low-loss phase shifter, based on RF MEMS series switches and a single-pole four-throw (SP4T) switch design, is presented. The phase shifter is fabricated on a 200 /spl mu/m-thick GaAs substrate, and occupies less than 12 mm/sup 2/ of space. The measured average insertion loss is -0.55 dB, with a reflection loss of less than -17 dB over the 8-12 GHz frequency range. The 2-bit phase shifter performs well up to 18 GHz with an average loss of only -0.85 dB and a near-perfect linear phase shift from DC-18 GHz. This is the lowest loss MMIC-type phase shifter to-date at 8-18 GHz.

Keywords

micromechanical devices; microwave phase shifters; microwave switches; -0.55 dB; -17 dB; 2 bit; 8 to 18 GHz; GaAs; GaAs substrate; RF MEMS series switch; SP4T switch; X-band; insertion loss; low-loss phase shifter; reflection loss; Computer hacking; Couplers; Delay lines; Frequency measurement; Gallium arsenide; Loss measurement; Micromechanical devices; Phase shifters; Radiofrequency microelectromechanical systems; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011624

Filename

1011624