Title : 
A 0.4V 2.02fJ/conversion-step 10-bit hybrid SAR ADC with time-domain quantizer in 90nm CMOS
         
        
            Author : 
Yan-Jiun Chen ; Chih-Cheng Hsieh
         
        
            Author_Institution : 
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
         
        
        
        
        
        
            Abstract : 
This paper presents an ultra-low voltage and power efficient 10-bit hybrid successive-approximation register (SAR) analog-to-digital converter (ADC). To reduce the total amount of capacitance and relieve requirement of comparator, we propose a hybrid architecture composed of coarse and fine conversions by 7-bit SAR ADC and 3.5-bit time-domain quantizer, respectively. Using residue voltages generated by coarse ADC and converting it to time-domain, the fine ADC detects the least three bits with 0.5-bit redundancy by Vernier delay structure. At 250KS/s and Nyquist rate input, the ADC prototype fabricated in 90nm CMOS consumes 200nW at 0.4V supply. It achieves a SNDR of 53.7db and a resulting FoM of 2.02-fJ/conv.-step.
         
        
            Keywords : 
CMOS integrated circuits; analogue-digital conversion; CMOS; Nyquist rate input; Vernier delay structure; capacitance; hybrid SAR ADC; hybrid successive-approximation register analog-to-digital converter; power 200 nW; residue voltages; size 90 nm; time-domain quantizer; voltage 0.4 V; word length 10 bit to 3.5 bit; CMOS integrated circuits; Delays; Frequency measurement; Noise; Redundancy; Time-domain analysis; Voltage control; SAR ADC; low power; time domain;
         
        
        
        
            Conference_Titel : 
VLSI Circuits Digest of Technical Papers, 2014 Symposium on
         
        
            Conference_Location : 
Honolulu, HI
         
        
            Print_ISBN : 
978-1-4799-3327-3
         
        
        
            DOI : 
10.1109/VLSIC.2014.6858372