• DocumentCode
    183060
  • Title

    A 0.4V 2.02fJ/conversion-step 10-bit hybrid SAR ADC with time-domain quantizer in 90nm CMOS

  • Author

    Yan-Jiun Chen ; Chih-Cheng Hsieh

  • Author_Institution
    Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • fYear
    2014
  • fDate
    10-13 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper presents an ultra-low voltage and power efficient 10-bit hybrid successive-approximation register (SAR) analog-to-digital converter (ADC). To reduce the total amount of capacitance and relieve requirement of comparator, we propose a hybrid architecture composed of coarse and fine conversions by 7-bit SAR ADC and 3.5-bit time-domain quantizer, respectively. Using residue voltages generated by coarse ADC and converting it to time-domain, the fine ADC detects the least three bits with 0.5-bit redundancy by Vernier delay structure. At 250KS/s and Nyquist rate input, the ADC prototype fabricated in 90nm CMOS consumes 200nW at 0.4V supply. It achieves a SNDR of 53.7db and a resulting FoM of 2.02-fJ/conv.-step.
  • Keywords
    CMOS integrated circuits; analogue-digital conversion; CMOS; Nyquist rate input; Vernier delay structure; capacitance; hybrid SAR ADC; hybrid successive-approximation register analog-to-digital converter; power 200 nW; residue voltages; size 90 nm; time-domain quantizer; voltage 0.4 V; word length 10 bit to 3.5 bit; CMOS integrated circuits; Delays; Frequency measurement; Noise; Redundancy; Time-domain analysis; Voltage control; SAR ADC; low power; time domain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits Digest of Technical Papers, 2014 Symposium on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4799-3327-3
  • Type

    conf

  • DOI
    10.1109/VLSIC.2014.6858372
  • Filename
    6858372