A 0.7V resistive sensor with temperature/voltage detection function in 16nm FinFET technologies

Author

Jaw-Juinn Horng ; Szu-Lin Liu ; Kundu, A. ; Chin-Ho Chang ; Chung-Hui Chen ; Chiang, Hsuan-Ching ; Yung-Chow Peng

Author_Institution

Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan

fYear

2014

fDate

10-13 June 2014

Firstpage

1

Lastpage

2

Abstract

This paper reports a combination structure of temperature and voltage sensor in a 16nm FinFET technology. The circuit transforms PTAT voltage across a resistor into an output clock with PTAT pulse-width. Fabricated in a 16nm CMOS, the temperature sensor achieves 1°C resolution over -10 ~ 90°C range and the voltage sensor achieves 4mV output error over 0.38V to 0.56V. The total chip size is 0.01mm² and draws 70uW total power from a 0.7V supply. Depending on resolution, the measurement time can change from 10μsec to 1.6msec. This approach is not restricted by forward junction bias (~0.7V) of conventional BJTs and diodes.

Keywords

CMOS integrated circuits; MOSFET; temperature sensors; BJT; CMOS; FinFET technologies; PTAT pulse-width; PTAT voltage; combination structure; diodes; forward junction bias; power 70 muW; resistive sensor; size 16 nm; temperature 1 degC; temperature detection function; temperature sensor; voltage 0.7 V; voltage 4 mV; voltage detection function; voltage sensor; Calibration; Clocks; Metals; Resistors; Temperature measurement; Temperature sensors; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits Digest of Technical Papers, 2014 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4799-3327-3

Type

conf

DOI

10.1109/VLSIC.2014.6858376

Filename

6858376