• DocumentCode
    1830712
  • Title

    Miniaturized and broadband V-band balanced frequency doubler for highly integrated 3-D MMIC

  • Author

    Nishikawa, K. ; Piernas, B. ; Nakagawa, T. ; Araki, K.

  • Author_Institution
    NTT Network Innovation Labs., Yokosuka, Japan
  • Volume
    1
  • fYear
    2002
  • fDate
    2-7 June 2002
  • Firstpage
    351
  • Abstract
    This paper presents a compact V-band balanced frequency doubler 3-D MMIC with broadband performance. The MMIC was fabricated by combining a commercial 0.15 /spl mu/m GaAs pHEMT technology with the 3-D MMIC technology. A fabricated frequency doubler MMIC, which occupies 0.92 mm/sup 2/, achieves 2.5-dBm output power and more than 15-dB fundamental signal suppression over 50-GHz to 68-GHz (30% bandwidth) for an 8-dBm input signal. A transmit MMIC, intended for 50-GHz application, realizes a 10-dBm output power and 40-dB isolation in an area of 1.48 mm/sup 2/, it is supported by input and output buffer amplifiers. These fabricated MMICs are very effective in realizing compact and highly integrated single-chip transceiver MMICs. Furthermore, they can be re-used for various V-band applications, resulting in significant cost reduction.
  • Keywords
    HEMT integrated circuits; III-V semiconductors; MMIC frequency convertors; frequency multipliers; gallium arsenide; 0.15 micron; 3D MMIC; 50 to 68 GHz; GaAs; GaAs pHEMT technology; broadband V-band balanced frequency doubler; buffer amplifier; single-chip transceiver; transmit MMIC; Bandwidth; Couplers; Frequency; Gallium arsenide; Impedance matching; Laboratories; MMICs; Power amplifiers; Power generation; Transceivers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2002 IEEE MTT-S International
  • Conference_Location
    Seattle, WA, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-7239-5
  • Type

    conf

  • DOI
    10.1109/MWSYM.2002.1011628
  • Filename
    1011628