A monolithically-integrated optical transmitter and receiver in a zero-change 45nm SOI process

Author

Georgas, M. ; Moss, B.R. ; Sun, Chao ; Shainline, Jeffrey ; Orcutt, Jason S. ; Wade, Mark ; Chen, Yu-Hui ; Nammari, Kareem ; Leu, J.C. ; Srinivasan, A. ; Ram, R.J. ; Popovic, Milos A. ; Stojanovic, V.

Author_Institution

Massachusetts Inst. of Technol., Cambridge, MA, USA

fYear

2014

fDate

10-13 June 2014

Firstpage

1

Lastpage

2

Abstract

An optical transmitter and receiver with monolithically-integrated photonic devices and circuits are demonstrated together for the first time in a commercial 45nm SOI process, without any process changes. The transmitter features an interleaved-junction carrier-depletion ring modulator and operates at 3.5Gb/s with an 8dB extinction ratio and combined circuit and device energy cost of 70fJ/bit. The optical receiver connects to an integrated SiGe detector designed for 1180nm wavelength and performs at 2.5Gb/s with 15μA sensitivity and energy cost of 220fJ/bit.

Keywords

Ge-Si alloys; elemental semiconductors; integrated optoelectronics; modulators; monolithic integrated circuits; optical modulation; optical receivers; optical sensors; optical transmitters; silicon; silicon-on-insulator; SOI process; Si; SiGe; bit rate 2.5 Gbit/s; bit rate 3.5 Gbit/s; current 15 muA; gain 8 dB; integrated SiGe detector; interleaved-junction carrier-depletion ring modulator; monolithically-integrated optical receiver; monolithically-integrated optical transmitter; monolithically-integrated photonic device; size 45 nm; wavelength 1180 nm; zero-change integration; CMOS integrated circuits; Modulation; Optical receivers; Optical sensors; Optical transmitters; Photonics; Monolithic; Optical; Receiver; SOI; Transmitter;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits Digest of Technical Papers, 2014 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4799-3327-3

Type

conf

DOI

10.1109/VLSIC.2014.6858378

Filename

6858378