A new SiC/SOI-based PWM generator for SiC-based power converters in high temperature environments

Author

Mostaghimi, O. ; Brennan, D.R. ; Wright, N.G. ; Horsfall, A.B. ; Stevens, R.C.

Author_Institution

Sch. of Electr., Electron. & Comput. Eng., Newcastle Univ., Newcastle upon Tyne, UK

fYear

2012

fDate

24-25 Feb. 2012

Firstpage

1

Lastpage

5

Abstract

A novel SiC/SOI-based PWM gate driver is proposed and designed using current source technique to accomplish variable duty-cycle PWM generation. The ring oscillator and constant current source stages use low power normally-on, epitaxial SiC-JFETs fabricated at Newcastle University. The amplification and control stages use enhancement-mode signal SOI MOSFETs. In the proposed design, the duty cycle can be varied from 10% to 90%. The PWM generator is then evaluated in a 200 kHz step-up converter which results in a 91% efficiency at 81% duty cycle.

Keywords

MOSFET; PWM power convertors; driver circuits; junction gate field effect transistors; low-power electronics; oscillators; silicon compounds; silicon-on-insulator; wide band gap semiconductors; PWM gate driver; SOI-based PWM generator; SiC; current source technique; efficiency 91 percent; enhancement-mode signal SOI MOSFET; epitaxial JFET; frequency 200 kHz; high temperature environments; power converters; ring oscillator; variable duty-cycle PWM generation; Epitaxial growth; Generators; JFETs; Logic gates; Pulse width modulation; Ring oscillators; Silicon carbide; dc-dc conversion; oscillator; pulse width modulation; silicon carbide; wide bandgap;

fLanguage

English

Publisher

ieee

Conference_Titel

Power and Energy Conference at Illinois (PECI), 2012 IEEE

Conference_Location

Champaign, IL

Print_ISBN

978-1-4577-1681-2

Electronic_ISBN

978-1-4577-1682-9

Type

conf

DOI

10.1109/PECI.2012.6184592

Filename

6184592