Optoelectronic mixing in three-terminal InP/InGaAs heterojunction bipolar transistors

Author

Liu, C.P. ; Betser, Y. ; Seeds, A.J. ; Ritter, D. ; Madjar, A.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK

Volume

1

fYear

1997

fDate

8-13 June 1997

Firstpage

359

Abstract

A three-terminal InP/InGaAs heterojunction bipolar transistor (HBT) with optical access has been fabricated and used in an optoelectronic mixer (OEM) configuration. Leakage of the photogenerated RF signal from the HBT base was identified as a cause of reduced mixed IF output power. By using a 3-stub tuner to present a high impedance to the base at signal frequency, over 5 dB improvement in the IF power was obtained resulting in a -4.7 dB system conversion gain. This result is the highest yet reported for a three-terminal HBT OEM and over 16 dB better than for a high quality photodiode/double-balanced mixer combination.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; phototransistors; -4.7 dB; IF power; InP-InGaAs; RF signal leakage; conversion gain; optoelectronic mixer; three-stub tuner; three-terminal InP/InGaAs heterojunction bipolar transistor; Frequency conversion; Heterojunction bipolar transistors; Impedance; Indium gallium arsenide; Indium phosphide; Optical frequency conversion; Optical mixing; Power generation; Radiofrequency identification; Tuners;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.604592

Filename

604592