Organic thin film transistors based on anthracene oligomers

Author

Inoue, Youji ; Suzuki, Toshiyasu ; Ito, Kaname ; Tokito, Shizuo

Author_Institution

NHK Sci. & Tech. Res. Labs., Tokyo, Japan

fYear

2003

fDate

17-19 June 2003

Firstpage

230

Lastpage

231

Abstract

Organic thin-film transistors (OTFTs) were fabricated using organic semiconductor anthracene oligomers, 2,2´-bianthracene (2A), 2,6-trianthracene (3A), and their dihexyl derivatives (DH-2A and DH-3A), as the active layer material. X-ray diffraction and atomic force microscopy revealed that the thin films of anthracene oligomers deposited by thermal evaporation had a high degree of lamellar ordering. The OTFTs showed high field effect mobilities; the highest mobility (0.13 cm²/Vs) was obtained for DH-2A.

Keywords

X-ray diffraction; X-ray microscopy; atomic force microscopy; organic semiconductors; semiconductor thin films; thin film transistors; vacuum deposited coatings; X-ray diffraction microscopy; active layer material; anthracene oligomers; atomic force microscopy; bianthracene; high field effect mobilities; high-vacuum evaporation; lamellar ordering; organic semiconductor; organic thin film transistors; thermal evaporation; trianthracene; Atomic force microscopy; Atomic layer deposition; Organic materials; Organic semiconductors; Organic thin film transistors; Semiconductor materials; Semiconductor thin films; Thermal force; Thin film transistors; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Consumer Electronics, 2003. ICCE. 2003 IEEE International Conference on

Print_ISBN

0-7803-7721-4

Type

conf

DOI

10.1109/ICCE.2003.1218898

Filename

1218898