• DocumentCode
    1831070
  • Title

    Internal charge generation in polyvinylidene fluoride films during poling

  • Author

    Eisenmenger, W. ; Schmidt, H.

  • Author_Institution
    1. Phys. Inst., Stuttgart Univ., Germany
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    635
  • Lastpage
    638
  • Abstract
    The stability of the piezoelectric and pyroelectric properties of PVDF depends on ionic charge injection and trapping at the surface of polarized crystallites. Poled samples in general show complete internal field neutralisation but agreement between the amount of injected charges per cm2 and the polarisation value. This indicates that a large number of additional charges must be generated internally for neutralisation. Such internal charge generation is possible by electrical degradation during poling. Now, Raman spectroscopy indicates that unzipping chain reactions produce additional H+ and F - ions. This is evidenced by two new peaks at 1118 cm-1 and 1515 cm-1 corresponding to conjugated polyene sequences arising in the Raman spectrum after poling. This is also in agreement with our observation that a large amount of HF gas is formed during poling. Thus, these additional charges could lead to a complete internal polarisation neutralisation even if the amount of injected charges is too small for this
  • Keywords
    Raman spectra; charge injection; dielectric polarisation; polymer films; Raman spectroscopy; charge trapping; conjugated polyene sequences; electrical degradation; internal charge generation; internal field neutralisation; internal polarisation neutralisation; ionic charge injection; polarized crystallites; poling; polyvinylidene fluoride films; unzipping chain reactions; Crystallization; Electrodes; Hafnium; Optical polarization; Piezoelectric films; Piezoelectric polarization; Polymer films; Pyroelectricity; Raman scattering; Spectroscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrets, 1999. ISE 10. Proceedings. 10th International Symposium on
  • Conference_Location
    Athens
  • Print_ISBN
    0-7803-5025-1
  • Type

    conf

  • DOI
    10.1109/ISE.1999.832126
  • Filename
    832126