1 and 2 watt MMIC power amplifiers for commercial K/Ka-band applications

Author

Schellenberg, J.M.

Author_Institution

Schellenberg Associates, Huntington Beach, CA, USA

Volume

1

fYear

2002

fDate

2-7 June 2002

Firstpage

445

Abstract

Two ICs, specifically designed for commercial applications at K/Ka-band frequencies, are presented. These ICs provide 1 and 2 watts of linear power respectively, gain levels of typically 17 dB and a power added efficiency of 25% at the 1 dB gain compression point. While the RF performance parameters are not state-of-the-art, these compact chips establish new levels for power density, Le. the ratio of output power to chip area. This figure of merit is particularly important for the cost sensitive commercial market.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MMIC; gallium arsenide; integrated circuit measurement; radio equipment; 1 W; 17 dB; 2 W; 25 percent; GaAs; GaAs IC; MMIC power amplifiers; PHEMT cells; RF performance parameters; commercial K-band applications; commercial Ka-band applications; cost sensitive commercial market; figure of merit; gain compression point; gain levels; linear power; output power to chip area ratio; power added efficiency; power density; Costs; Gallium arsenide; MIM capacitors; MMICs; PHEMTs; Power amplifiers; Power generation; Radio frequency; Resistors; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011651

Filename

1011651