Title :
Characteristics of microwave power GaN HEMTs on 4-inch Si wafers
Author :
Manohar, S. ; Narayanan, Arun ; Keerti, A. ; Pham, A. ; Brown, J. ; Borges, R. ; Linthicum, K.
Author_Institution :
Holcombe Dept. of Electr. & Comput. Eng., Clemson Univ., SC, USA
Abstract :
We present the design and development of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on a 4-inch Si wafer. The GaN HEMT devices demonstrate a maximum drain current of 900 mA/mm, a peak g/sub m/ of 300 mS/mm, and a microwave output power density of 1.5 W/mm. To the best of the authors´ knowledge, these are the best results reported on GaN HEMTs on 4-inch Si wafers.
Keywords :
III-V semiconductors; aluminium compounds; electric current; gallium compounds; microwave field effect transistors; power HEMT; semiconductor device measurement; wide band gap semiconductors; 300 mS/mm; 4 in; AlGaN-GaN; AlGaN/GaN HEMTs; AlGaN/GaN high electron mobility transistors; Si; Si wafers; maximum drain current; microwave output power density; microwave power GaN HEMTs; peak transconductance; Aluminum gallium nitride; Fabrication; Gallium nitride; HEMTs; Large-scale systems; MODFETs; Manufacturing; Microwave devices; Silicon carbide; Substrates;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011652
