DocumentCode :
1831396
Title :
Optical constants and dielectric permittivity of lutetium oxide films deposited with an electron gun
Author :
Wiktorczyk, T. ; Ska, J. Poprav
Author_Institution :
Inst. of Phys., Wroclaw Univ., Poland
fYear :
1999
fDate :
1999
Firstpage :
709
Lastpage :
712
Abstract :
Lu2O3 films deposited by electron-beam evaporation exhibit interesting optical properties in the range 0.2 - 2 μm. The films exhibit very good transparency over a wide spectral range. Only a very small influence of the deposition pressure as well as thermal annealing of specimens on optical properties was observed. Refractive index and its dispersion over a wide spectral region was determined. Films exhibit only a weak absorption in violet and ultraviolet ranges. The high-frequency dielectric permittivity was estimated. Thin films of LU2O3 can be useful for thin-film optics. Lu2O3-Si antireflection coatings were fabricated. These coatings reduce reflectivity of silicon-based photocells from 35% at λ=0.56 μm down to 0.9%
Keywords :
annealing; antireflection coatings; dielectric thin films; lutetium compounds; optical films; permittivity; refractive index; transparency; ultraviolet spectra; 0.2 to 2 mum; Lu2O3; UV spectra; antireflection coatings; deposition pressure; electron-beam evaporation; optical constants; permittivity; refractive index; thermal annealing; thin films; transparency; Annealing; Coatings; Dielectric constant; Dielectric thin films; Electromagnetic wave absorption; Optical films; Optical refraction; Optical variables control; Permittivity; Refractive index;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrets, 1999. ISE 10. Proceedings. 10th International Symposium on
Conference_Location :
Athens
Print_ISBN :
0-7803-5025-1
Type :
conf
DOI :
10.1109/ISE.1999.832143
Filename :
832143
Link To Document :
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