Title :
Performance of a CMOS Bluetooth transceiver IC with copper RF passives
Author :
My The Doan ; Qian Yin ; Khoo Ee Sze ; Khannur, P.B. ; Rustagi, S.C. ; Shi Jinglin ; Pang Dow Foo ; Ajjikuttira, A.B.
Author_Institution :
Inst. of Microelectron., Singapore, Singapore
Abstract :
On-chip copper inductors, MIM capacitors and precision resistors in a novel, low-cost process are described. A CMOS transceiver for Bluetooth was realized with these new RF passive components and compared with the same IC realized in a commercial 0.35 /spl mu/m CMOS process with Al metalization. In the low-noise amplifier (LNA) a gain improvement of around 5 dB and a noise-figure reduction of 1.2 dB were observed. For the image-reject mixer (IRM), the conversion gain improved by 3.5 dB. The output power of the power amplifier (PA) increased by 1.5 dB. For the phase-locked loop (PLL) frequency synthesizer, the settling time was reduced almost in half.
Keywords :
CMOS integrated circuits; copper; integrated circuit metallisation; transceivers; 0.35 micron; CMOS Bluetooth transceiver IC; Cu; MIM capacitor; PLL frequency synthesizer; RF passive component; conversion gain; copper metallization; image-reject mixer; inductor; low-noise amplifier; noise figure; output power; power amplifier; resistor; settling time; Bluetooth; CMOS integrated circuits; CMOS process; Copper; Inductors; Phase locked loops; Power amplifiers; Radio frequency; Radiofrequency integrated circuits; Transceivers;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011672
