DocumentCode :
1831759
Title :
High performance single supply power amplifiers for GSM and DCS applications using true enhancement mode FET technology
Author :
Glass, E. ; Shields, M. ; Reyes, A.
Author_Institution :
Semicond. Products Sector, Motorola Inc., Tempe, AZ, USA
Volume :
1
fYear :
2002
fDate :
2-7 June 2002
Firstpage :
557
Abstract :
Two high performance single supply power amplifier IC products have been developed for GSM and DCS applications using true enhancement mode FET technology. At VD=3.2V, under CW conditions, the GSM IC supplies +35.5 dBm output power at 58% PAE and the DCS IC supplies +33.5 dBm at 46% PAE. These ICs have low leakage currents similar to HBT and LDMOS and do not require the use of a drain switch. In addition, due to a high threshold voltage (Vth =+0.6V), they exhibit excellent RF isolation at Vref=0.1V and Pin=+5 dBm and do not require on-chip attenuators.
Keywords :
cellular radio; field effect integrated circuits; leakage currents; power amplifiers; power integrated circuits; 3.2 V; 46 percent; 58 percent; DCS; GSM; IC product; RF isolation; enhancement mode FET technology; leakage current; output power; power added efficiency; single supply power amplifier; threshold voltage; Application specific integrated circuits; Distributed control; FET integrated circuits; GSM; High power amplifiers; Leakage current; Power amplifiers; Power generation; Power supplies; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-7239-5
Type :
conf
DOI :
10.1109/MWSYM.2002.1011681
Filename :
1011681
Link To Document :
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