High performance single supply power amplifiers for GSM and DCS applications using true enhancement mode FET technology

Author

Glass, E. ; Shields, M. ; Reyes, A.

Author_Institution

Semicond. Products Sector, Motorola Inc., Tempe, AZ, USA

Volume

1

fYear

2002

fDate

2-7 June 2002

Firstpage

557

Abstract

Two high performance single supply power amplifier IC products have been developed for GSM and DCS applications using true enhancement mode FET technology. At VD=3.2V, under CW conditions, the GSM IC supplies +35.5 dBm output power at 58% PAE and the DCS IC supplies +33.5 dBm at 46% PAE. These ICs have low leakage currents similar to HBT and LDMOS and do not require the use of a drain switch. In addition, due to a high threshold voltage (Vth =+0.6V), they exhibit excellent RF isolation at Vref=0.1V and Pin=+5 dBm and do not require on-chip attenuators.

Keywords

cellular radio; field effect integrated circuits; leakage currents; power amplifiers; power integrated circuits; 3.2 V; 46 percent; 58 percent; DCS; GSM; IC product; RF isolation; enhancement mode FET technology; leakage current; output power; power added efficiency; single supply power amplifier; threshold voltage; Application specific integrated circuits; Distributed control; FET integrated circuits; GSM; High power amplifiers; Leakage current; Power amplifiers; Power generation; Power supplies; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011681

Filename

1011681