A fully monolithic SiGe quadrature voltage controlled oscillator design for GSM/DCS-PCS applications

Author

Cordeau, D. ; Paillot, J.-M. ; Cam, H. ; De Astis, G. ; Dascalescu, L.

Author_Institution

ACCO, Saint-Germain-En-Laye, France

Volume

1

fYear

2002

fDate

2-7 June 2002

Firstpage

565

Abstract

This paper describes the design and optimization in terms of phase noise of a fully monolithic SiGe Voltage Controlled Oscillator (VCO) with quadrature outputs. The proposed circuit is made of two cross-coupled differential VCO´s, with integrated resonator, to ensure the quadrature outputs. The quadrature VCO core runs on 13 mA from a 2.7 V power supply. The simulated phase noise is about -140 dBc/Hz at 3 MHz frequency offset almost all over the tuning range. The oscillator is tuned from 1.44 GHz to 1.76 GHz with a tuning voltage varying from 0 to 3 V.

Keywords

Ge-Si alloys; bipolar analogue integrated circuits; cellular radio; circuit tuning; integrated circuit noise; phase noise; semiconductor materials; voltage-controlled oscillators; 0 to 3 V; 1.44 to 1.76 GHz; 13 mA; 2.7 V; DCS-PCS; GSM; RF integrated circuit; SiGe; bipolar technology; cross-coupled differential VCOs; design optimization; fully-monolithic SiGe quadrature voltage controlled oscillator; integrated resonator; phase noise; tuning range; Circuit optimization; Circuit simulation; Design optimization; Frequency; Germanium silicon alloys; Phase noise; Power supplies; Silicon germanium; Tuning; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011683

Filename

1011683