Title :
1.25Gbps optical links for mobile handsets
Author :
Azuma, Shin´ichiro ; Yanagimoto, Ryoji ; Kamitani, Shingo ; Edamoto, Masakazu ; Arata, Katsumi ; Matsui, Hirofumi ; Akada, Hiroyuki ; Masuda, Ryoichi ; Hoshino, Kozo ; Nagura, Kazuhito ; Ogawa, Hiroaki
Author_Institution :
Sharp Corp., Tenri
Abstract :
This paper presents a 1.25 Gbps optical links design for mobile handsets. The system consists of an optical connector and a SER/DES main chip. The former contains an 850 nm VCSEL (vertical cavity surface emission laser), a GaAs-PIN photodiode and a transimpedance amplifier (TIA). The later includes a serializer, a deserializer, a VCSEL driver, a limiting amplifier, a PLL and a CDR. The chip and TIA were fabricated in a 0.13 um CMOS process with MIM capacitors. A digital type CDR with fine timing controls allows sharing a VCO between transmitter and receiver, resulting in reduced both power consumption and silicon area. The system fully demonstrated a 1.25 Gbps data and video stream transmission, consuming 108.4 mW of power under 1.2 V/3.3 V supply voltages.
Keywords :
CMOS integrated circuits; MIM devices; capacitors; clock and data recovery circuits; driver circuits; mobile handsets; optical couplers; optical interconnections; optical links; optical phase locked loops; optical receivers; optical transmitters; p-i-n photodiodes; surface emitting lasers; video streaming; voltage-controlled oscillators; CDR; CMOS process; MIM capacitors; PIN photodiode; PLL; VCO; VCSEL driver; bit rate 1.25 Gbit/s; data transmission; deserializer; limiting amplifier; mobile handsets; optical connector; optical links; power 108.4 mW; receiver; serializer; timing controls; transimpedance amplifier; transmitter; vertical cavity surface emission laser; video stream transmission; voltage 1.2 V; voltage 3.3 V; wavelength 850 nm; Connectors; Mobile handsets; Optical amplifiers; Optical design; Optical fiber communication; Optical receivers; Optical transmitters; Photodiodes; Stimulated emission; Vertical cavity surface emitting lasers;
Conference_Titel :
Solid-State Circuits Conference, 2008. A-SSCC '08. IEEE Asian
Conference_Location :
Fukuoka
Print_ISBN :
978-1-4244-2604-1
Electronic_ISBN :
978-1-4244-2605-8
DOI :
10.1109/ASSCC.2008.4708722