Title :
Very low phase-noise fully-integrated coupled VCOs
Author :
Jacobsson, H. ; Hansson, B. ; Berg, H. ; Gevorgian, S.
Author_Institution :
Microwave & High Speed Electron. Res. Center, Ericsson Microwave Syst., Molndal, Sweden
Abstract :
With the aim of achieving very low phase noise, two area and power consumption efficient methods of coupling two or more identical VCOs are presented. To verify the principles, a set of fully integrated, coupled VCOs of the cross-coupled differential pair type, was manufactured in a commercial SiGe HBT technology. The measured phase noise at 100 kHz offset frequency was -106 dBc/Hz at 6 GHz using two coupled VCOs and -103 dBc/Hz at 12 GHz using four coupled VCOs. A phase noise reduction of 1-6 dB was achieved relative to a single VCO of the same topology. In one of the two methods, output signals are additionally obtained in quadrature.
Keywords :
Ge-Si alloys; bipolar analogue integrated circuits; coupled circuits; heterojunction bipolar transistors; integrated circuit noise; phase noise; semiconductor materials; voltage-controlled oscillators; 12 GHz; 6 GHz; SiGe; SiGe HBT technology; cross-coupled differential pair; fully-integrated coupled VCOs; phase noise; power consumption; Energy consumption; Frequency measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Manufacturing; Noise measurement; Phase measurement; Phase noise; Silicon germanium; Voltage-controlled oscillators;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011686