A 20 W 2080-2200 MHz hybrid power amplifier optimized for error amplifier applications

Author

Crescenzi, E.J., Jr.

Author_Institution

UltraRF, Sunnyvale, CA, USA

Volume

2

fYear

2002

fDate

2-7 June 2002

Firstpage

613

Abstract

A hybrid power amplifier module has been designed for application as an error amplifier in feedforward PAs for UNITS multi-channel operation. Error amplifiers require excess bandwidth, excellent gain flatness, and high linearity. Si LDMOS power devices were integrated with chip-and-wire matching and hybrid SMT amplifier circuitry chosen to optimize these characteristics.

Keywords

UHF integrated circuits; UHF power amplifiers; feedforward; hybrid integrated circuits; impedance matching; modules; power MOSFET; power integrated circuits; surface mount technology; thick film circuits; 20 W; 2080 to 2200 MHz; Si; Si LDMOS power devices; UNITS multi-channel operation; chip-and-wire matching; error amplifier; excess bandwidth; feedforward power amplifier; gain flatness; high linearity; hybrid SMT amplifier circuitry; hybrid power amplifier module; hybrid thick-film circuitry; 3G mobile communication; Bandwidth; Broadband amplifiers; Driver circuits; Linearity; Operational amplifiers; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Surface-mount technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011696

Filename

1011696