Title :
A 80GHz voltage controlled oscillator utilizing a negative varactor in 90nm CMOS technology
Author :
Chaivipas, Win ; Okada, Kenichi ; Matsuzawa, Akira
Author_Institution :
Dept. Phys. Electron., Tokyo Inst. of Technol., Tokyo
Abstract :
A 80 GHz voltage controlled oscillator is presented. It is shown that impedance transformation enables the transformation of a varactor capacitance into negative varactor partially canceling the capacitance of the differential pair. This enables the transmission line resonator to be longer and have a higher impedance. Design criterion for achieving negative varactor is also presented, and design issues of millimeter wave voltage controlled oscillators are discussed. The voltage controlled oscillator is fabricated in 90 nm CMOS technology and achieves a phase noise of -109 dBc/Hz at 10 MHz offset with 13 mW power consumption from a 1.2 V power supply.
Keywords :
CMOS integrated circuits; capacitance; millimetre wave oscillators; phase noise; varactors; voltage-controlled oscillators; CMOS technology; capacitance; frequency 80 GHz; millimeter wave voltage controlled oscillators; negative varactor; phase noise; power 13 mW; power consumption; transmission line resonator; voltage 1.2 V; CMOS technology; Capacitance; Energy consumption; Impedance; Millimeter wave technology; Phase noise; Power supplies; Power transmission lines; Varactors; Voltage-controlled oscillators;
Conference_Titel :
Solid-State Circuits Conference, 2008. A-SSCC '08. IEEE Asian
Conference_Location :
Fukuoka
Print_ISBN :
978-1-4244-2604-1
Electronic_ISBN :
978-1-4244-2605-8
DOI :
10.1109/ASSCC.2008.4708747