Title :
A 60-GHz direct-conversion transmitter in 130-nm CMOS
Author :
Zhang, F. ; Yang, B. ; Wicks, B.N. ; Liu, Z. ; Ta, C.M. ; Mo, Y. ; Wang, K. ; Felic, G. ; Nadagouda, P. ; Walsh, T. ; Shieh, W. ; Mareels, I. ; Evans, R.J. ; Skafidas, E.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Melbourne, Melbourne, VIC
Abstract :
This paper describes the system architecture and design procedure for a 60-GHz transmitter in 130-nm CMOS process. The transmitter achieves a saturation power output of better than 4 dBm and an output-referred 1-dB compression point of 2 dBm. The LO to RF port isolation is better than 27 dB from 57 to 65 GHz. To the best of the authorspsila knowledge, this is the first reported 60-GHz transmitter in 130-nm CMOS that incorporates on-chip filtering.
Keywords :
CMOS integrated circuits; UHF mixers; power amplifiers; transmitters; CMOS; direct-conversion transmitter; frequency 57 GHz to 60 GHz; on-chip filtering; saturation power output; size 130 nm; Band pass filters; Coupling circuits; Low-noise amplifiers; Millimeter wave circuits; Power amplifiers; RF signals; Radio frequency; Radiofrequency amplifiers; Switches; Transmitters; CMOS; coupler; filter; millimeter wave circuit; mixer; power amplifier; transmitter;
Conference_Titel :
Solid-State Circuits Conference, 2008. A-SSCC '08. IEEE Asian
Conference_Location :
Fukuoka
Print_ISBN :
978-1-4244-2604-1
Electronic_ISBN :
978-1-4244-2605-8
DOI :
10.1109/ASSCC.2008.4708748
