Ultra low phase noise SiGe HBT. Application to a C band sapphire resonator oscillator

Author

Cibiel, G. ; Regis, M. ; Llopis, O. ; Kersale, Y. ; Giordano, V. ; Lafontaine, H. ; Plana, R. ; Chaubet, M.

Author_Institution

Lab. d´Autom. et d´Anal. des Syst., CNRS, Toulouse, France

Volume

2

fYear

2002

fDate

2-7 June 2002

Firstpage

691

Abstract

In this paper, the electrical and noise performance of a 0.8 /spl mu/m Silicon Germanium (SiGe) transistor optimized for the design of low phase noise circuits are described. The nonlinear model developed for the transistor and its use for the design of low phase noise C band Sapphire resonator oscillator are reported. The best measured phase noise (at ambient temperature) is -133 dBc/Hz at 1 kHz offset from a 4.85 GHz carrier frequency for a loaded Q/sub L/ factor of 60,000.

Keywords

Ge-Si alloys; Q-factor; dielectric resonator oscillators; heterojunction bipolar transistors; phase noise; sapphire; semiconductor device models; semiconductor device noise; semiconductor materials; 0.8 micron; 4.85 GHz; Al/sub 2/O/sub 3/; C-band; Q-factor; SiGe; SiGe HBT; electrical charcteristics; nonlinear model; phase noise; sapphire resonator oscillator; Circuit noise; Design optimization; Frequency measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Noise measurement; Oscillators; Phase noise; Q measurement; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011715

Filename

1011715