Title :
A 46-ppm/°C temperature and process compensated current reference with on-chip threshold voltage monitoring circuit
Author :
Ueno, Ken ; Hirose, Tetsuya ; Asai, Tetsuya ; Amemiya, Yoshihito
Author_Institution :
Dept. of Electr. Eng., Hokkaido Univ., Sapporo
Abstract :
A CMOS current reference circuit has been developed in 0.35-mum CMOS process. The circuit consists of a voltage reference circuit, a noninverting amplifier, and an output MOS transistor. The circuit generates a reference current independent of temperature and process variations. Temperature- and process-compensation were achieved by utilizing the zero temperature coefficient bias point of a MOSFET. Theoretical analyses and experimental results showed that the circuit generates a quite stable reference current of 18.4 muA on average. The temperature coefficient, load sensitivity, and process sensitivity (sigma/mu) of the circuit were 46-ppm/sigmaC, 1.5%/V, and 4.4%, respectively. The circuit can be used as a current reference circuit for high precision analog circuit systems.
Keywords :
CMOS analogue integrated circuits; MOSFET; amplifiers; reference circuits; CMOS current reference circuit; MOSFET; analog circuit; load sensitivity; noninverting amplifier; on-chip threshold voltage monitoring circuit; process sensitivity; temperature coefficient; Circuits; Monitoring; Temperature; Threshold voltage;
Conference_Titel :
Solid-State Circuits Conference, 2008. A-SSCC '08. IEEE Asian
Conference_Location :
Fukuoka
Print_ISBN :
978-1-4244-2604-1
Electronic_ISBN :
978-1-4244-2605-8
DOI :
10.1109/ASSCC.2008.4708753