DocumentCode :
1832716
Title :
Advanced IC technology - opportunities and challenges
Author :
Anis, Mohab
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of Waterloo, Waterloo, ON
fYear :
2008
fDate :
18-21 May 2008
Firstpage :
776
Lastpage :
779
Abstract :
Technology scaling introduces major challenges in yield and performance with the employment of standard single-gate MOSFETs, traditional metal interconnects, and the classical 2-dimensional integration technology. Therefore, there is a need for innovative technologies aimed at enhancing the integration density, performance, and reliability of nanoscale chips. Promising technologies to resolve the degrading performance of devices and interconnects include: (1) 3-dimensional chip stacking with vertical interconnections through chips, (2) on-chip carbon nanotubes as a replacement for metal interconnects , and (3) scalable devices such as double gate FinFETs with lower leakage current characteristics as compared to the standard single-gate transistors. This paper introduces those three promising technologies and highlights the associated opportunities and challenges.
Keywords :
integrated circuits; 2D integration technology; 3D chip stacking; IC technology; innovative technology; integrated circuit; integration density; metal interconnects; nanoscale chips; on-chip carbon nanotube; scalable device; single-gate MOSFET; single-gate transistor; technology scaling; CMOS technology; Carbon nanotubes; FinFETs; Integrated circuit interconnections; Integrated circuit technology; MOSFETs; Paper technology; Silicon; Stacking; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-1683-7
Electronic_ISBN :
978-1-4244-1684-4
Type :
conf
DOI :
10.1109/ISCAS.2008.4541533
Filename :
4541533
Link To Document :
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