Title :
Chemical vapor deposition and physical vapor deposition of metal/barrier binary stacks on polytetrafluoroethylene low-k dielectric
Author :
Talevi, R. ; Nijsten, S. ; Gundlach, H. ; Knorr, A. ; Kumar, K. ; Bian, Z. ; Rosenmayer, T. ; Kaloyeros, A.E. ; Geer, R.E.
Author_Institution :
State Univ. of New York, Albany, NY, USA
Abstract :
Metal/barrier binary stacks have been deposited in situ on polytetrafluoroethylene (PTFE) films. The metals consist of chemical vapor deposited copper and aluminum. The barriers consist of chemical vapor deposited titanium nitride for Al, and physical vapor deposited titanium nitride and tantalum nitride for Cu. Surface and elemental analysis reveal compositionally pure metals and barriers, showing virtually no fluorine contamination in as-deposited barriers or metals. Preliminary thermal annealing studies indicate titanium nitride (for Al) is an effective barrier against thermally driven fluorine diffusion from PTFE
Keywords :
aluminium; annealing; chemical interdiffusion; chemical vapour deposition; copper; dielectric thin films; diffusion barriers; integrated circuit interconnections; integrated circuit metallisation; integrated circuit yield; polymer films; sputter deposition; surface contamination; tantalum compounds; titanium compounds; Al-TiN; Cu-TaN; Cu-TiN; PTFE films; as-deposited barriers; as-deposited metals; chemical vapor deposited aluminum; chemical vapor deposited copper; chemical vapor deposited titanium nitride barrier; chemical vapor deposition; compositionally pure barriers; compositionally pure metals; elemental analysis; fluorine contamination; metal/barrier binary stacks; physical vapor deposited tantalum nitride barrier; physical vapor deposited titanium nitride barrier; physical vapor deposition; polytetrafluoroethylene low-k dielectric; surface analysis; thermal annealing; thermally driven fluorine diffusion; Aluminum; Argon; Atherosclerosis; Chemical analysis; Chemical vapor deposition; Copper; Dielectric thin films; Hydrogen; Plasma temperature; Titanium;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704902
