DocumentCode :
1832825
Title :
Notice of Retraction
Tapered tip hollow silicon microneedles for transdermal drug delivery
Author :
Ashaf, M.W. ; Tayyaba, S. ; Afzulpurkr, N.
Author_Institution :
Sch. of Eng. & Technol., Asian Inst. of Technol. (AIT), Bangkok, Thailand
Volume :
1
fYear :
2010
fDate :
1-3 Aug. 2010
Abstract :
Notice of Retraction

After careful and considered review of the content of this paper by a duly constituted expert committee, this paper has been found to be in violation of IEEE´s Publication Principles.

We hereby retract the content of this paper. Reasonable effort should be made to remove all past references to this paper.

The presenting author of this paper has the option to appeal this decision by contacting TPII@ieee.org.

Microneedles are gaining popularity from last few years because of its potential applications in medical field. In this paper, fabrication and structural analysis of tapered tip hollow silicon out-of-plane microneedles for transdermal drug delivery (TDD) are presented. Inductively coupled plasma (ICP) etching technology has been used to fabricate the silicon microneedles. To envisage the mechanical strength of microneedles the structural analysis using ANSYS has been performed. The effect of axial and transverse load on the microneedles during skin insertion is investigated in the stress analysis. The analysis predicts that the resultant stress values due to applied bending and axial loads are in the safe range.
Keywords :
bending; bioMEMS; drugs; etching; mechanical strength; needles; silicon; skin; stress analysis; ANSYS; Si; bending; hollow silicon microneedles; inductively coupled plasma etching; mechanical strength; skin insertion; stress analysis; transdermal drug delivery; DNA; Electrooptic deflectors; Etching; Humans; Skin; Substrates; Ultrasonic imaging; deep reactive ion etching; finite element method; inductively coupled plasma etching; silicon hollow miconeedles; transdermal drug delivery;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Mechanical and Electronics Engineering (ICMEE), 2010 2nd International Conference on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-7479-0
Type :
conf
DOI :
10.1109/ICMEE.2010.5558506
Filename :
5558506
Link To Document :
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