Title :
New extraction algorithm for GaAs-HBTs with low intrinsic base resistance
Author :
Lenk, F. ; Rudolph, M.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany
Abstract :
A new algorithm for extraction of the small-signal equivalent circuit elements of HBTs is presented. An analytical non-iterative approach is used in order to ensure physical significance of the extracted parameters. In order to enhance the robustness and reliability of the extraction routine, a simplified formula to determine the intrinsic base resistance R/sub b2/ Is presented. The new algorithm is verified by extraction of GaInP/GaAs HBT equivalent-circuit elements.
Keywords :
III-V semiconductors; equivalent circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device models; GaInP-GaAs; GaInP/GaAs HBT; analytical noniterative method; intrinsic base resistance; parameter extraction algorithm; smali-signal equivalent circuit model; Algorithm design and analysis; Artificial intelligence; Circuit topology; Condition monitoring; Electrical resistance measurement; Equivalent circuits; Heterojunction bipolar transistors; MMICs; Parameter extraction; Robustness;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011730
